Principal Engineer, VLSI Design Engineering

3 дней назад

Киев, Киев, Украина Sandisk Полный рабочий день 100 000 $ - 120 000 $ в год
Company Description

Sandisk understands how people and businesses consume data and we relentlessly innovate to deliver solutions that enable today's needs and tomorrow's next big ideas. With a rich history of groundbreaking innovations in Flash and advanced memory technologies, our solutions have become the beating heart of the digital world we're living in and that we have the power to shape.

Sandisk meets people and businesses at the intersection of their aspirations and the moment, enabling them to keep moving and pushing possibility forward. We do this through the balance of our powerhouse manufacturing capabilities and our industry-leading portfolio of products that are recognized globally for innovation, performance and quality.

Sandisk has two facilities recognized by the World Economic Forum as part of the Global Lighthouse Network for advanced 4IR innovations. These facilities were also recognized as Sustainability Lighthouses for breakthroughs in efficient operations. With our global reach, we ensure the global supply chain has access to the Flash memory it needs to keep our world moving forward.

 

Job Description
  • Design, optimize, verify, and debug transistor-level circuit, CORE (ROW/COL) for emerging 3D non-volatile memory
  • Design and conduct analysis on memory core circuits such as Row/Column drivers, decoder, sense amplifier, etc.
  • Perform mixed/analog design to implement core operation supporting circuit design which is the interface circuit for core operation.
  • Validate design performance and functionalities by running block and chip level simulations using industry standard integrated circuit (IC) tools such as Cadence design environment, HSPICE/FINESIM, UNIX.
  • Supervise layout work, support verification, and silicon bring up throughout design cycle.
  • Conceive new concepts and approaches in memory core design, architecture, and operation algorithm for best performing NAND device.
Qualifications

REQUIRED:

  • Requires BS/MS degree in Electrical Engineering or equivalent with 7 or more years of relevant experience.
  • Knowledge and/or experience in non-volatile memory design (NAND flash memory cell operation in particular) is a big advantage
  • A strong device background and experience with evaluating new process technologies for use in design is preferred.

SKILLS: 

  • The ideal candidate must have proven ability to achieve results in a fast moving, dynamic environment
  • Self-motivated and self-directed, however, must have demonstrated ability to work well with people
  • A proven desire to work as a team member, both on the same team and outside of the team
  • Ability to troubleshoot and analyze complex problems.
  • Ability to multi-task and meet deadlines.
  • Excellent communication (written and verbal) and interpersonal skills.

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